TC57
DS21437B-page 2
2002 Microchip Technology Inc.
1.0    ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage ........................................................+12V
Output Current ....................................................50mA
Output Voltage............................. -0.3V to (V
IN
+ 0.3V)
Power Dissipation.............................................150mW
Operating Temperature Range.............-40癈 to +85癈
Storage Temperature Range ..............-40癈 to +150癈
*Stresses  above  those  listed  under  "Absolute  Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation  sections  of  the  specifications  is  not  implied.
Exposure  to  Absolute  Maximum  Rating  conditions  for
extended periods may affect device reliability.
TC55 ELECTRICAL SPECIFICATIONS
TC57EP3002 Electrical Characteristics: SHDN
= GND, V
IN
= V
OUT
+ 1V, V
OUT
= 3V to 5V, I
OUT
= 0, T
A
= 25癈, Test Circuit of
Figure 3-1, unless otherwise noted. (Note 2)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
Input Voltage


8
V
V
EXT
Voltage on EXT Output


8
V
V
OUT
Output Voltage
0.98 X V
R
V
R
?.5%  1.02 X V
R
V
I
OUT
= 50mA (Note 1)
V
OUT
Load Regulation
-60

60
mV
1mA d I
OUT
 d 100mA (Note 3)
V
IN
- V
OUT
Dropout Voltage

100

mV
I
OUT
= 100mA (Note 2)
I
DD
Supply Current

50
80
V
SHDN
= V
IN
= 5V
I
SHDN
Shutdown Supply Current


0.6
V
SHDN
= GND
V
OUT
/V
IN
Line Regulation

0.1
0.3
%/V
I
OUT
= 50mA, 4V d V
IN
d 8V
(Note 3)
V
OUT
/T
V
OUT
Temperature Coefficient

?00

ppm/癈   I
OUT
= 10mA, -40癈 < T
J
 < +85癈
(Note 3)
I
LEXT
EXT Pin Leakage Current


0.5
I
EXT
EXT Sink Current


25
mA
Note 4
V
IH
SHDN Input High Logic Threshold
1.5


V
V
IL
SHDN Input Low Logic Threshold


0.25
V
I
IH
SHDN Input Current @ V
IH


0.1
V
SHDN
= V
IN
= 5V
I
IL
SHDN Input Current @ V
IL
-0.2
-0.05
0
V
SHDN
= GND
Note   1:   V
R
is the regulator output voltage setting.
2:   Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a
1V differential.
3:   Varies with type of pass transistor used. Numbers shown are for the test circuit of Figure 3-1.
4:   The product of I
EXT
X V
EXT
must be less than the maximum allowable power dissipation.
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